MPSA13, 14 darlington transistor (npn) features power dissipation p cm: 0.625 w (tamb=25 ) collector current i cm: 0.5 a collector-base voltage v (br)cbo : 30 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v(br) cbo ic= 100a, i e =0 30 v collector-emitter breakdown voltage v(br) ceo i c = 1ma , i b =0 30 v emitter-base breakdown voltage v(br) ebo i e = 100a, i c =0 10 v collector cut-off current i cbo v cb = 30v, i e =0 0.1 a emitter cut-off current i ebo v eb = 10v, i c =0 0.1 a h fe(1) * v ce =5v, i c =10ma MPSA13 mpsa14 5000 10000 dc current gain h fe(2) * v ce =5v, i c =100ma MPSA13 mpsa14 10000 20000 collector-emitter saturation voltage v ce(sat) * i c = 100ma, i b =0.1 ma 1.5 v base-emitter voltage v be(on) * v ce =5v, i c = 100ma 2.0 v transition frequency f t v ce =5v, i c = 10ma , f=100mhz 125 mhz * pulse test: pulse width 300 s, duty cycle 2%. 1 2 3 to-92 1. emitter 2. base 3. collector MPSA13/14 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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